US Patent Issued to International Business Machines on Feb. 17 for "Vertical-transport field-effect transistor with backside source/drain connections" (New Hampshire, New York, Vermont Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,328, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Vertical-transport field-effect transistor with backside source/drain connections" was invented by Brent A. Anderson (Jericho, Vt.), Albert M. Chu (Nashua, N.H.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Lawrence A. Clevenger (Saratoga Springs, N.Y.) and Reinaldo Vega (Mahopac, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A VTFET is provided on a wafer. A backside power delivery network is on a backside of the wafer. A first backside contact is connected to a bottom source/drain region of the VTFET and a first po...