ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,637, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked transistors with metal vias" was invented by Ruilong Xie (Niskayuna, N.Y.), Biswanath Senapati (Mechanicville, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and Shahrukh Khan (Sandy Hook, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a stacked device structure having a first field-effect transistor having a first source/drain region, and a second field-effect transistor vertically stacked above the first field-effect transistor, the second field-effect transistor having a second source/drain region a...