US Patent Issued to International Business Machines on Feb. 17 for "Phase change memory with reduced programming current" (New York Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,565, issued on Feb. 17, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Phase change memory with reduced programming current" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Zuoguang Liu (Schenectady, N.Y.) and Arthur Gasasira (Halfmoon, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a heater formed on a substrate; a hardmask formed on the heater; a phase change material layer formed on a first side of the heater and the hardmask; a first electrode formed on the phase change material layer on the first side; and a second ele...