US Patent Issued to International Business Machines on Feb. 10 for "Three dimensional cross-point non-volatile memory" (New York Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,338, issued on Feb. 10, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Three dimensional cross-point non-volatile memory" was invented by Chanro Park (Clifton Park, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Kangguo Cheng (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory having a 3D cross-point architecture and twice the cell density is provided in which vertically stacked word lines run in plane (i.e., parallel) to the substrate and bit lines runs perpendicular to the vertically stacked word lines. The vertically stacked word lines are located in a patterned...