ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,723, issued on Aug. 4, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Metal spacer 3D-MIM capacitor" was invented by Shravana Kumar Katakam (Lehi, Utah), Ashim Dutta (Clifton Park, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A metal-insulator-metal (MIM) capacitor includes a dielectric layer forming a plane and a capacitor dielectric formed in a pattern having a width parallel to the plane and a height transverse to the plane. Electrodes are formed as sidewall spacers on opposite sides of the width of the capacitor dielectric. Each of the electrodes has a contact to make an electrica...