US Patent Issued to International Business Machines on Aug. 25 for "Structure and method to form a stack field effect transistor with different channel oriented gate-all-around devices" (New York Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,857, issued on Aug. 25, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Structure and method to form a stack field effect transistor with different channel oriented gate-all-around devices" was invented by Shogo Mochizuki (Mechanicville, N.Y.) and Gen Tsutsui (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a stacked field effect transistor (FET) structure. The stacked FET structure includes a bottom FET device and a top FET device. The bottom FET device has a vertically stacked gate-all-around (GAA) nanosheet (NS) structure and a first channel...