US Patent Issued to International Business Machines on April 7 for "Nanosheet epitaxy with full bottom isolation" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,776, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Nanosheet epitaxy with full bottom isolation" was invented by Julien Frougier (Albany, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Lan Yu (Voorheesville, N.Y.) and Pietro Montanini (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor channel layers vertically aligned and stacked one on top of another, separated by a gate stack material wrapping around the semiconductor channel layers, a heavily doped p-type field effect transistor (p-FET) source drain epitaxy region adjacent to the semiconductor channe...