US Patent Issued to International Business Machines on April 7 for "MRAM device with self-aligned bottom electrodes" (New York, South Carolina Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,916, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM device with self-aligned bottom electrodes" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Lisamarie White (Chapin, S.C.), Willie Lester Muchrison Jr. (Troy, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic tunnel junction (MTJ) stack, where a vertical side surface of a bottom electrode of the MTJ stack is surrounded by an oxide, where the bottom electrode and the oxide are horizontally aligned. A magnetic tunnel junction (MTJ) stack, where a vertical side surface of a bottom electro...