US Patent Issued to International Business Machines on April 7 for "Interconnects formed using integrated damascene and subtractive etch processing" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,983, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Interconnects formed using integrated damascene and subtractive etch processing" was invented by Nicholas Anthony Lanzillo (Wynantskill, N.Y.), Huai Huang (Clifton Park, N.Y.), Hosadurga Shobha (Niskayuna, N.Y.) and Lawrence A. Clevenger (Saratoga Springs, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure comprises two or more interconnect lines of a first width in a given interconnect level, and two or more interconnect lines of a second width in the given interconnect level. The two or more interconnect lines of the second wid...