ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,780, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Gate-all-around transistors with hybrid orientation" was invented by Nicolas Jean Loubet (Guilderland, N.Y.), Shogo Mochizuki (Mechanicville, N.Y.) and Maruf Amin Bhuiyan (Albany, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a p-type field-effect transistor including first channels made of silicon having a (110) crystallographic orientation. The semiconductor device further includes an n-type field-effect transistor including second channels made of silicon having a (100) crystallographic orientation. The semiconducto...