US Patent Issued to International Business Machines on April 21 for "Stacked resistive random-access memory cross-point cell" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,753, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked resistive random-access memory cross-point cell" was invented by Min Gyu Sung (Latham, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Julien Frougier (Albany, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor structure with a bottom electrode in an interlayer dielectric material. The bottom electrode material with a rectangular shape has a first notch is in a top portion of a portion of the bottom electrode material. The first notch occurs in an int...