US Patent Issued to International Business Machines on April 21 for "SRAM with improved program and sensing margin for scaled nanosheet devices" (New York, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,513, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"SRAM with improved program and sensing margin for scaled nanosheet devices" was invented by Min Gyu Sung (Latham, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Heng Wu (Santa Clara, Calif.) and Julien Frougier (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a memory cell and multiple transistors therein. The multiple transistors are formed using channels including a stack having alternating layers of conductive semiconductor material and layers of other material that are insulative. Two or more of the multipl...