US Patent Issued to International Business Machines on April 21 for "Selective encapsulation for metal electrodes of embedded memory devices" (New York Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,748, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Selective encapsulation for metal electrodes of embedded memory devices" was invented by Ashim Dutta (Menands, N.Y.), Ekmini Anuja De Silva (Slingerlands, N.Y.) and Jennifer Church (Troy, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a method for fabricating the same. The semiconductor device structure includes an embedded memory device and an electrode in contact with a top surface of the memory embedded device. A metal encapsulation layer is in contact with a top surface of the electrode and a portion of sidew...