ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,750, issued on April 21, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Bridge cell phase change memory" was invented by Ruilong Xie (Niskayuna, N.Y.), Carl Radens (LaGrangeville, N.Y.), Juntao Li (Cohoes, N.Y.) and Kangguo Cheng (Schenectady, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A phase change bridge memory cell includes: a first interlevel dielectric layer; a first electrode and a second electrode disposed in the first interlevel dielectric layer and separated by a portion of the first interlevel dielectric layer; an interlevel dielectric pillar on the portion of the first interlevel dielectric layer; a firs...