US Patent Issued to International Business Machines on April 14 for "Epitaxy everywhere based self-aligned direct backside contact" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,496, issued on April 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Epitaxy everywhere based self-aligned direct backside contact" was invented by Ruilong Xie (Niskayuna, N.Y.), Kisik Choi (Watervliet, N.Y.), Muthumanickam Sankarapandian (Niskayuna, N.Y.) and Shogo Mochizuki (Mechanicville, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Self-aligned direct backside contacts by an epitaxy everywhere under source/drain region approach are provided. In one aspect, a semiconductor device includes: a field-effect transistor(s) on a backside interlayer dielectric; an epitaxial contact placeholder in the backside interlaye...