US Patent Issued to INTERNATIONAL BUSINESS MACHINES, SAMSUNG ELECTRONICS on July 14 for "Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the like" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,682,938, issued on July 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.) and SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the like" was invented by See-Hun Yang (Morgan Hill, Calif.), Chirag Garg (San Jose, Calif.), Panagiotis Charilaos Filippou (Fremont, Calif.), Jaewoo Jeong (Los Altos, Calif.), Jason Robert Joseph Martineau (Fremont, Calif.) and Mahesh Samant (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array includes a word lines intersecting bit line-complementary bit line pairs at a plurality of ...