US Patent Issued to Intel on Sept. 8 for "Selective ferroelectric deployment for single-transistor, multiple-capacitor devices" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,626, issued on Sept. 8, was assigned to Intel Corp. (Santa Clara, Calif.).

"Selective ferroelectric deployment for single-transistor, multiple-capacitor devices" was invented by Nazila Haratipour (Portland, Ore.), Christopher Neumann (Portland, Ore.), Brian Doyle (Portland, Ore.), Sou-Chi Chang (Portland, Ore.), Bernal Granados Alpizar (Beaverton, Ore.), Sarah Atanasov (Beaverton, Ore.), Matthew Metz (Portland, Ore.), Uygar Avci (Portland, Ore.), Jack Kavalieros (Portland, Ore.) and Shriram Shivaraman (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a group of ferroelectric capacitors with a shared plate that ...