US Patent Issued to Intel on Sept. 22 for "SRAM with nanoribbon width modulation for greater read stability" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,435, issued on Sept. 22, was assigned to Intel Corp. (Santa Clara, Calif.).

"SRAM with nanoribbon width modulation for greater read stability" was invented by Clifford Ong (Portland, Ore.), Leonard Guler (Hillsboro, Ore.), Smita Shridharan (Hillsboro, Ore.), Zheng Guo (Hillsboro, Ore.), Eric Karl (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit (IC) static random-access memory (SRAM) comprising colinear pass-gate transistors and pull-down transistors having different nanoribbon widths. A narrower ribbon width within the pass-gate transistor, relative to the pull-down transistor, may ...