US Patent Issued to Intel on Sept. 1 for "3D source and drain contacts tuned for PMOS and NMOS" (Oregon Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,205, issued on Sept. 1, was assigned to Intel Corp. (Santa Clara, Calif.).

"3D source and drain contacts tuned for PMOS and NMOS" was invented by Willy Rachmady (Beaverton, Ore.), Nitesh Kumar (Beaverton, Ore.), Jami A. Wiedemer (Scappoose, Ore.), Cheng-Ying Huang (Hillsboro, Ore.), Marko Radosavljevic (Portland, Ore.), Mauro J. Kobrinsky (Portland, Ore.), Patrick Morrow (Portland, Ore.), Rohit Galatage (Hillsboro, Ore.), David N. Goldstein (Beaverton, Ore.) and Christopher J. Jezewski (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a first device, and a second device laterally adjacent to the ...