US Patent Issued to Intel on Oct. 6 for "Silicon nitride layer under a copper pad" (Arizona Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,774, issued on Oct. 6, was assigned to Intel Corp. (Santa Clara, Calif.).

"Silicon nitride layer under a copper pad" was invented by Brandon C. Marin (Gilbert, Ariz.), Suddhasattwa Nad (Chandler, Ariz.), Srinivas V. Pietambaram (Chandler, Ariz.), Gang Duan (Chandler, Ariz.), Jeremy D. Ecton (Gilbert, Ariz.), Kristof Darmawikarta (Chandler, Ariz.) and Sameer Paital (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein relate to systems, apparatuses, or processes directed to forming an LGA pad on a side of a substrate, with a layer of silicon nitride between the LGA pad and a dielectric layer of the substrate. The LGA pad m...