ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,657, issued on Oct. 27, was assigned to Intel Corp. (Santa Clara, Calif.).
"High endurance super-lattice anti-ferroelectric capacitors" was invented by Sou-Chi Chang (Portland, Ore.), Nazila Haratipour (Portland, Ore.), Christopher Neumann (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Brian Doyle (Portland, Ore.), Sarah Atanasov (Beaverton, Ore.), Bernal Granados Alpizar (Beaverton, Ore.) and Uygar Avci (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors having a cerium oxide doped hafnium zirconium oxide based anti-ferroel...