US Patent Issued to Intel on Oct. 27 for "Bilayer encapsulation of a memory cell" (New Mexico Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,851, issued on Oct. 27, was assigned to Intel Corp. (Santa Clara, Calif.).

"Bilayer encapsulation of a memory cell" was invented by Errol Todd Ryan (Albuquerque, N.M.), Kyuchul Chong (Rio Rancho, N.M.), David M. Fryauf (Rio Rancho, N.M.) and Zhiguo Sun (Albuquerque, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprising a memory cell comprising a storage element including a phase change memory; and a bilayer formed on a first side and a second side of the memory cell, the bilayer including an inner layer comprising a first nitride and an outer layer comprising a second nitride."

The patent was filed on May 20, 2022, under Ap...