US Patent Issued to Intel on May 26 for "Trim patterning for forming angled transistors" (Oregon, California Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,827, issued on May 26, was assigned to Intel Corp. (Santa Clara, Calif.).

"Trim patterning for forming angled transistors" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Elliot Tan (Portland, Ore.), Shem Ogadhoh (West Linn, Ore.), Sagar Suthram (Portland, Ore.), Pushkar Sharad Ranade (San Jose, Calif.) and Wilfred Gomes (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example IC device formed using trim patterning as described herein may include a support structure, a first elongated structure (e.g., a first fin or nanoribbon) and a second elongated structure (e.g...