US Patent Issued to Intel on May 26 for "Lattice stack for internal spacer fabrication" (Oregon Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,850, issued on May 26, was assigned to Intel Corp. (Santa Clara, Calif.).

"Lattice stack for internal spacer fabrication" was invented by Cheng-Ying Huang (Hillsboro, Ore.), Urusa Alaan (Hillsboro, Ore.), Susmita Ghose (Hillsboro, Ore.), Rambert Nahm (Beaverton, Ore.), Natalie Briggs (Hillsboro, Ore.), Nicole K. Thomas (Portland, Ore.), Willy Rachmady (Beaverton, Ore.), Marko Radosavljevic (Portland, Ore.) and Jack T. Kavalieros (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form gate-all-around (GAA) semiconductor devices, such as those having a stacked transistor configuration. In one example case, ...