US Patent Issued to Intel on May 19 for "SRAM cells for low temperature integrated circuit operation" (Oregon, California Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,633,336, issued on May 19, was assigned to Intel Corp. (Santa Clara, Calif.).

"SRAM cells for low temperature integrated circuit operation" was invented by Abhishek Anil Sharma (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Rajabali Koduri (Saratoga, Calif.), Pushkar Ranade (San Jose, Calif.) and Sagar Suthram (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits including static random-access memory (SRAM) bit-cells that are actively cooled to a low temperature (e.g., in the cryogenic range) where transistor drive currents become significantly increased and transistor leakage currents significantly reduced. With the drive...