US Patent Issued to Intel on May 19 for "Source or drain structures with phosphorous and arsenic dopants" (Oregon Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,180, issued on May 19, was assigned to Intel Corp. (Santa Clara, Calif.).

"Source or drain structures with phosphorous and arsenic dopants" was invented by Patrick Wallace (Hillsboro, Ore.), Robert Ehlert (Portland, Ore.), Subrina Rafique (Beaverton, Ore.), Peter Wells (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Shishir Pandya (Hillsboro, Ore.), Xiaochen Ren (Portland, Ore.) and Yulia Tolstova (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, an integrated circuit structure includes a first vertical stack of horizontal nanowires laterally spaced apart from a second vertical stack of horizontal nanowires. An epitax...