US Patent Issued to Intel on May 12 for "Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers" (Oregon Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,383, issued on May 12, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers" was invented by Kirby Maxey (Hillsboro, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Carl Naylor (Portland, Ore.), Chelsey Dorow (Portland, Ore.), Kevin O'Brien (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Tanay Gosavi (Portland, Ore.) and Uygar Avci (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors, devices, systems, and methods are discussed related to transistors including 2D material channe...