ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,486, issued on March 31, was assigned to Intel Corp. (Santa Clara, Calif.).
"Dual contact process with selective deposition" was invented by Kevin Cook (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Gilbert Dewey (Beaverton, Ore.), Nazila Haratipour (Hillsboro, Ore.), Chi-Hing Choi (Portland, Ore.), Jitendra Kumar Jha (Hillsboro, Ore.) and Srijit Mukherjee (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include complementary metal-oxide-semiconductor (CMOS) devices and methods of making such devices. In an embodiment, a CMOS device comprises a first transistor with a first conductivity type, where th...