ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,658, issued on March 3, was assigned to Intel Corp. (Santa Clara, Calif.).
"Technologies for majority gates" was invented by Hai Li (Portland, Ore.), Ian Alexander Young (Olympia, Wash.), Dmitri Evgenievich Nikonov (Beaverton, Ore.), Julien Sebot (Portland, Ore.), Raseong Kim (Portland, Ore.), Chia-Ching Lin (Portland, Ore.) and Punyashloka Debashis (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies for majority gates are disclosed. In one embodiment, a ferroelectric layer has three inputs and an output adjacent a surface of the ferroelectric. When a voltage is applied to each input, the inputs and a ground plane below the ...