US Patent Issued to Intel on March 3 for "Surface functionalization of sinx thin film by wet etching for improved adhesion of metal-dielectric for HSIO" (Arizona Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,817, issued on March 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Surface functionalization of sinx thin film by wet etching for improved adhesion of metal-dielectric for HSIO" was invented by Yi Yang (Gilbert, Ariz.), Rahul N. Manepalli (Chandler, Ariz.), Suddhasattwa Nad (Chandler, Ariz.), Marcel Wall (Phoenix) and Benjamin Duong (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include an electronic package. In an embodiment, the electronic package comprises a package substrate with a plurality of first layers, where the first layers comprise an organic material. In an embodiment, a trace is embedded i...