US Patent Issued to Intel on March 3 for "Nanoribbon thick gate device with hybrid dielectric tuning for high breakdown and VT modulation" (Oregon Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,682, issued on March 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Nanoribbon thick gate device with hybrid dielectric tuning for high breakdown and VT modulation" was invented by Walid M. Hafez (Portland, Ore.), Rahul Ramaswamy (Portland, Ore.), Tanuj Trivedi (Hillsboro, Ore.), Jeong Dong Kim (Scappoose, Ore.), Ting Chang (Portland, Ore.), Babak Fallahazad (Portland, Ore.), Hsu-Yu Chang (Hillsboro, Ore.) and Nidhi Nidhi (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, the semiconductor device compri...