ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,189, issued on March 24, was assigned to Intel Corp. (Santa Clara, Calif.).
"Memory devices with vertical transistors" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Anand S. Murthy (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Tahir Ghani (Portland, Ore.) and Sagar Suthram (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices including vertical transistors and methods of forming such memory devices are disclosed. An example memory device includes a substrate, a BL in the substrate, a channel region over a portion of the BL, a second region over the channel region, an insulator wrapped around at least a portion of...