US Patent Issued to Intel on March 24 for "Asymmetric source and drain contacts for a thin film transistor (TFT) structure" (Oregon, Washington Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,241, issued on March 24, was assigned to Intel Corp. (Santa Clara, Calif.).

"Asymmetric source and drain contacts for a thin film transistor (TFT) structure" was invented by Cheng Tan (Hillsboro, Ore.), Van H. Le (Beaverton, Ore.), Akash Garg (Portland, Ore.), Shokir A. Pardaev (Portland, Ore.), Timothy Jen (Portland, Ore.), Abhishek Anil Sharma (Portland, Ore.), Thiruselvam Ponnusamy (Portland, Ore.), Moira C. Vyner (Portland, Ore.), Caleb Barrett (Ridgefield, Wash.), Forough Mahmoudabadi (Beaverton, Ore.), Albert B. Chen (Portland, Ore.), Travis W. Lajoie (Forest Grove, Ore.) and Christopher M. Pelto (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & T...