ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,717, issued on March 17, was assigned to Intel Corp. (Santa Clara, Calif.).
"Frontside and backside epi contact" was invented by Gilbert Dewey (Beaverton, Ore.), Cheng-Ying Huang (Hillsboro, Ore.), Nicole K. Thomas (Portland, Ore.), Marko Radosavljevic (Portland, Ore.), Patrick Morrow (Portland, Ore.), Ashish Agrawal (Hillsboro, Ore.), Willy Rachmady (Beaverton, Ore.), Seung Hoon Sung (Portland, Ore.) and Christopher M. Neumann (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having a frontside and backside contact in an epi region of a stacked transistor configuration. In o...