US Patent Issued to Intel on June 30 for "Gallium nitride (GaN) epitaxy on patterned substrate for integrated circuit technology" (Oregon Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,355, issued on June 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gallium nitride (GaN) epitaxy on patterned substrate for integrated circuit technology" was invented by Pratik Koirala (Portland, Ore.), Paul Nordeen (Hillsboro, Ore.), Tushar Talukdar (Wilsonville, Ore.), Kimin Jun (Portland, Ore.), Thomas Hoff (Hillsboro, Ore.), Han Wui Then (Portland, Ore.), Nicole K. Thomas (Portland, Ore.), Marko Radosavljevic (Portland, Ore.) and Paul B. Fischer (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gallium nitride (GaN) epitaxy on patterned substrates for integrated circuit technology is described. In an example, an integrated...