US Patent Issued to Intel on June 23 for "Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" (Oregon Inventors)

Posted On: 2026-07-15

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,660, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" was invented by Kevin P. O'Brien (Portland, Ore.), Rachel Steinhardt (Beaverton, Ore.), Chelsey Dorow (Portland, Ore.), Carl H. Naylor (Portland, Ore.), Kirby Maxey (Hillsboro, Ore.), Sudarat Lee (Hillsboro, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Uygar Avci (Portland, Ore.), Scott Clendenning (Portland, Ore.), Tristan Tronic (Aloha, Ore.), Mahmut Sami Kavrik (Eugene, Ore.) and Ande Kitamura (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Offic...

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US Patent Issued to Intel on June 23 for "Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel region" (Oregon Inventors)