US Patent Issued to Intel on June 2 for "Integrated circuit structures with source or drain dopant diffusion blocking layers" (Oregon Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,200, issued on June 2, was assigned to Intel Corp. (Santa Clara, Calif.).

"Integrated circuit structures with source or drain dopant diffusion blocking layers" was invented by Cory Bomberger (Portland, Ore.), Anand Murthy (Portland, Ore.), Anupama Bowonder (Portland, Ore.), Aaron Budrevich (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure include integrated circuit structures having source or drain dopant diffusion blocking layers. In an example, an integrated circuit structure includes a fin including silicon. A gate structure is over a channel region of the fin, the gate st...