US Patent Issued to Intel on June 16 for "Selective gate oxide formation on 2D material based transistor devices" (Oregon Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,272, issued on June 16, was assigned to Intel Corp. (Santa Clara, Calif.).

"Selective gate oxide formation on 2D material based transistor devices" was invented by Mahmut Sami Kavrik (Eugene, Ore.), Carl Naylor (Portland, Ore.), Chelsey Dorow (Portland, Ore.), Chia-Ching Lin (Portland, Ore.), Dominique Adams (Portland, Ore.), Kevin O'Brien (Portland, Ore.), Matthew Metz (Portland, Ore.), Scott Clendenning (Portland, Ore.), Sudarat Lee (Hillsboro, Ore.), Tristan Tronic (Aloha, Ore.) and Uygar Avci (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices, transistor structures, systems, and techniques, are described herein related to sel...