ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,487, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.).
"Selectively thinned gate-all-around (GAA) structures" was invented by Mohammad Hasan (Aloha, Ore.), Tahir Ghani (Portland, Ore.), Pratik A. Patel (Portland, Ore.), Leonard P. Guler (Hillsboro, Ore.), Mohit K. Haran (Hillsboro, Ore.) and Clifford L. Ong (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having thinned semiconductor regions (e.g., thinner nanoribbons) compared to other semiconductor devices on the same substrate and at a comparable height (e.g., within same layer or adjacent layers). In a...