ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,501, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.).
"Seeded growth for 2D nanoribbon transistors" was invented by Chelsey Dorow (Portland, Ore.), Carl H. Naylor (Portland, Ore.), Kirby Maxey (Hillsboro, Ore.), Kevin O'Brien (Portland, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Chia-Ching Lin (Portland, Ore.), Uygar Avci (Portland, Ore.), Matthew Metz (Portland, Ore.), Sudarat Lee (Hillsboro, Ore.), Ande Kitamura (Portland, Ore.), Scott B. Clendenning (Portland, Ore.) and Mahmut Sami Kavrik (Eugene, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor has multiple channel regions coupling source and drain str...