US Patent Issued to Intel on July 28 for "Metal gate cut formed after source and drain contacts" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,530, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.).

"Metal gate cut formed after source and drain contacts" was invented by Swapnadip Ghosh (Hillsboro, Ore.), Matthew J. Prince (Portland, Ore.), Alison V. Davis (Portland, Ore.), Chun C. Kuo (Hillsboro, Ore.), Andrew Arnold (Hillsboro, Ore.) and Reza Bayati (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices that include a gate cut formed after the formation of source/drain contacts. In an example, a semiconductor device includes a gate structure around or otherwise on a semiconductor region that extends fr...