US Patent Issued to Intel on July 28 for "Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer" (Oregon Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,534, issued on July 28, was assigned to Intel Corp. (Santa Clara, Calif.).

"Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer" was invented by Dan S. Lavric (Beaverton, Ore.), Dax M. Crum (Beaverton, Ore.), Oleg Golonzka (Beaverton, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a secon...