US Patent Issued to Intel on Feb. 24 for "Gate-all-around integrated structures having gate height reduction and dielectric capping material with shoulder portions inside gate stack" (Oregon Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,779, issued on Feb. 24, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate-all-around integrated structures having gate height reduction and dielectric capping material with shoulder portions inside gate stack" was invented by William Hsu (Portland, Ore.), Leonard P. Guler (Hillsboro, Ore.), Vivek Thirtha (Portland, Ore.), Nitesh Kumar (Beaverton, Ore.), Oleg Golonzka (Beaverton, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having reduced gate height structures and subfins, and method of fabricating gate-all-around integrated circuit structures having reduced...