US Patent Issued to Intel on Feb. 24 for "Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers" (Oregon Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,782, issued on Feb. 24, was assigned to Intel Corp. (Santa Clara, Calif.).

"Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers" was invented by Dan S. Lavric (Beaverton, Ore.), Dax M. Crum (Beaverton, Ore.), YenTing Chiu (Portland, Ore.), David J. Towner (Portland, Ore.), David N. Goldstein (Beaverton, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers are described. For example, an integ...