ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,035, issued on Feb. 24, was assigned to Intel Corp. (Santa Clara, Calif.).
"Airgaps used in backend memory structures" was invented by Miriam R. Reshotko (Portland, Ore.), Van H. Le (Beaverton, Ore.), Travis W. Lajoie (Forest Grove, Ore.) and Abhishek Anil Sharma (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein for forming backend memory structures with airgaps in an interconnect region above semiconductor devices. The airgaps may be provided between conductive features, such as wordlines, to reduce parasitic capacitance. An interconnect region above a plurality of semiconductor devices includes any numbe...