US Patent Issued to Intel on Feb. 17 for "Organic film stress buffer for interface of metal and dielectric" (Arizona Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,628, issued on Feb. 17, was assigned to Intel Corp. (Santa Clara, Calif.).

"Organic film stress buffer for interface of metal and dielectric" was invented by Sarah Blythe (Phoenix), Jieying Kong (Chandler, Ariz.), Peumie Abeyratne Kuragama (Chandler, Ariz.) and Hongxia Feng (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system includes a metallic contact integrated onto a semiconductor integrated circuit substrate with a stress buffer dielectric between the contact and the bulk dielectric. The bulk dielectric typically covers an integrated circuit metal layer to provide electrical isolation of the circuitry. The semiconductor circ...