ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,259, issued on Feb. 17, was assigned to Intel Corp. (Santa Clara, Calif.).

"Backside shunt contact for improved integrated circuit layout" was invented by Patrick Morrow (Portland, Ore.) and Seenivasan Subramaniam (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having conductive backside structures to couple various transistor structures. In some embodiments, a given conductive backside structure acts as a shunt interconnect between two transistors, such as between the gate of one transistor and the source or drain region of another transistor. In an example, an integrated ...