US Patent Issued to Intel on Aug. 4 for "Wall that includes a gas between metal gates of a semiconductor device" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,780, issued on Aug. 4, was assigned to Intel Corp. (Santa Clara, Calif.).

"Wall that includes a gas between metal gates of a semiconductor device" was invented by Sukru Yemenicioglu (Portland, Ore.), Leonard P. Guler (Hillsboro, Ore.), Hongqian Sun (Sammamish, Wash.), Shengsi Liu (Portland, Ore.), Tahir Ghani (Portland, Ore.) and Baofu Zhu (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a wall within a metal gate cut in a transistor layer of a semiconductor device, where the wall includes a volume of a gas such as air, nitrogen...