US Patent Issued to Intel on Aug. 25 for "Source or drain metallization prior to contact formation in stacked transistors" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,819, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Source or drain metallization prior to contact formation in stacked transistors" was invented by Gilbert Dewey (Beaverton, Ore.), Cheng-Ying Huang (Hillsboro, Ore.), Nicole K. Thomas (Portland, Ore.), Marko Radosavljevic (Portland, Ore.), Patrick Morrow (Portland, Ore.), Ashish Agrawal (Hillsboro, Ore.), Willy Rachmady (Beaverton, Ore.), Nazila Haratipour (Hillsboro, Ore.), Seung Hoon Sung (Portland, Ore.), I-Cheng Tung (Hillsboro, Ore.), Christopher M. Neumann (Portland, Ore.), Koustav Ganguly (Beaverton, Ore.) and Subrina Rafique (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent ...