US Patent Issued to Intel on Aug. 25 for "Integrated circuits with high dielectric constant interfacial layering" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,778, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Integrated circuits with high dielectric constant interfacial layering" was invented by Sarah Atanasov (Beaverton, Ore.), Nazila Haratipour (Portland, Ore.), Sou-Chi Chang (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.) and Uygar E. Avci (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure are directed to advanced integrated circuit structure fabrication and, in particular, integrated circuits with high dielectric constant (HiK) interfacial layering between an electrode and a ferroelectric (FE) or anti-ferroelectric (AFE...